PHOTOCONDUCTIVITY SPECTRUM OF P-TYPE CUINS₂ SINGLE CRYSTALSGONZALEZ J; ALBERTO TORRES J; SANCHEZ PEREZ G et al.1982; PHYSICA STATUS SOLIDI. (A). APPLIED RESEARCH; ISSN 0031-8965; DDR; DA. 1982; VOL. 69; NO 1; PP. K37-K41; BIBL. 17 REF.Article

COMPOSITION DETERMINATION OF CUINS₂ BY A CHEMICAL ANALYSIS METHODHWANG HL; LIU LM; YANG MH et al.1982; SOL. ENERGY MATER.; ISSN 0165-1633; NLD; DA. 1982; VOL. 7; NO 2; PP. 225-236; BIBL. 23 REF.Article

MASS SPECTROMETRIC STUDIES OF THE DECOMPOSITION AND THE HEAT OF FORMATION OF CUINS₂(S)WIEDEMEIER H; SANTANDREA R.1983; ZEITSCHRIFT FUER ANORGANISCHE UND ALLGEMEINE CHEMIE; ISSN 0044-2313; DDR; DA. 1983; VOL. 497; NO 2; PP. 105-118; ABS. GER; BIBL. 27 REF.Article

COMPOSITIONAL ANALYSIS OF CUINS₂ CHALCOPYRITE SEMICONDUCTORHWANG HL; LIU LM; YANG MH et al.1982; PHOTOVOLTAIC SOLAR ENERGY CONFERENCE. 4/1982/STRESA; NLD/USA/GBR; DORDRECHT; BOSTON; LONDON: D. REIDEL PUBLISHING COMPANY; DA. 1982; PP. 568-573; BIBL. 12 REF.Conference Paper

DETERMINATION OF TRACE ELEMENTS IN CUINS₂HWANG HL; LIU LM; YANG MH et al.1982; SOL. ENERGY MATER.; ISSN 0165-1633; NLD; DA. 1982; VOL. 7; NO 2; PP. 237-252; BIBL. 29 REF.Article

EXPERIMENTAL DETECTION OF THE MISSING B₁ MODE IN CUINS₂ SINGLE CRYSTALJOSHI NV.1981; JRS, J. RAMAN SPECTROSC.; ISSN 0377-0486; GBR; DA. 1981; VOL. 11; NO 6; PP. 517-518; BIBL. 9 REF.Article

COMPOSITIONAL AND TRACE-ELEMENTAL ANALYSIS OF CUINS₂, CUINSE₂ AND RELATED TERNARY ALLOIESHWANG HL; YANG MH; SHEN CS et al.1982; PHOTOVOLTAIC SPECIALISTS CONFERENCE. 16/1982-09-27/SAN DIEGO CA; USA; NEW YORK: IEEE; DA. 1982; PP. 867-871; BIBL. 7 REF.Conference Paper

ESTIMATION OF FORCE CONSTANTS AND PHONON FREQUENCIES OF TERNARY SEMICONDUCTING COMPOUNDS WITH CHALCOPYRITE STRUCTURE FROM SPECIFIC HEAT DATADEUS P; FREI V; BILEK O et al.1982; PHYSICA STATUS SOLIDI. (B). BASIC RESEARCH; ISSN 0370-1972; DDR; DA. 1982; VOL. 112; NO 1; PP. 269-277; ABS. FRE/GER; BIBL. 27 REF.Article

CRYSTAL GROWTH AND CHEMICAL TRANSPORT PROPERTIES OF HG_1-XCD_XTE AND CUINS₂WIEDEMEIER H; CHANDRA D; YANG PH et al.1981; INTERNATIONAL CONFERENCE ON CHEMICAL VAPOR DEPOSITION. 8/1981/GOUVIEUX; USA; PENNINGTON NJ: THE ELECTROCHEMICAL SOCIETY; DA. 1981; PP. 157-158; BIBL. 3 REF.Conference Paper

Quelques propriétés électriques et photoélectriques d'hétérojonctions GaSe-p ― Cu3In5S9-nGASANOVA, L. G; MAGOMEDOV, A. Z; KYAZYM-ZADE, A. G et al.Fizika i tehnika poluprovodnikov. 1984, Vol 18, Num 1, pp 159-162, issn 0015-3222Article

HETEROEPITAXIAL GROWTH OF GAP LAYERS ON CUINS₂ AND THEIR CHARACTERIZATIONHWANG HL; LIN JY; YANG MH et al.1981; THIN SOLID FILMS; ISSN 0040-6090; CHE; DA. 1981; VOL. 81; NO 2; PP. 145-153; BIBL. 14 REF.Article

Investigation on the phosphorus interstitials in phosphorus-implanted copper indium disulfide by a simplified total energy calculationHSU, Y. J; HWANG, H. L.Journal of applied physics. 1989, Vol 66, Num 4, pp 1651-1653, issn 0021-8979, 3 p.Article

Determination and analysis of dispersive optical constants of CuIn₃S₅ thin filmsKHEMIRI, N; SINAOUI, A; KANZARI, M et al.Physica. B, Condensed matter. 2011, Vol 406, Num 9, pp 1778-1783, issn 0921-4526, 6 p.Article

Structural characterization of CuInS₂ thin films from Cu―In metal inksGUANBI CHEN; LEI WANG; XIA SHENG et al.Physica status solidi. A, Applications and materials science (Print). 2011, Vol 208, Num 10, pp 2399-2405, issn 1862-6300, 7 p.Article

Preparation of CuIn₅S₈ thin films by single-source organometallic chemical vapour depositionNOMURA, R; SEKI, Y; MATSUDA, H et al.Thin solid films. 1992, Vol 209, Num 2, pp 145-147, issn 0040-6090Article

Vibrational spectra of spinel-type compound CuIn₅S₈GASANLY, N. M; EL-HAMID, S. A; GASANOVA, L. G et al.Physica status solidi. B. Basic research. 1992, Vol 169, Num 2, pp K115-K118, issn 0370-1972Article

p-d hybridization of the valence bands of copper indium disulfideHSU, T. M.Journal of applied physics. 1991, Vol 69, Num 6, pp 3772-3774, issn 0021-8979, 3 p.Article

Preparation of copper-indium-sulfide thin films by solution pyrolysis of organometallic sourcesNOMURA, R; KANAYA, K; MATSUDA, H et al.Chemistry Letters. 1988, Num 11, pp 1849-1850, issn 0366-7022Article

Some remarks on annealing and doping in CuInS₂LIN, J. L; LIU, L. M; LUE, J. T et al.Journal of applied physics. 1986, Vol 59, Num 2, pp 378-382, issn 0021-8979Article

Infrared study of the lattice vibrations in CuInS₂NEUMANN, H; KISSINGER, W; SOBOTTA, H et al.Czechoslovak journal of physics. 1984, Vol 34, Num 1, pp 69-77, issn 0011-4626Article

Niveaux pièges dans les monocristaux Cu3In5S9TAGIROV, V. I; GASANOVA, L. G; MAGOMEDOV, A. Z et al.Fizika i tehnika poluprovodnikov. 1983, Vol 17, Num 8, pp 1521-1523, issn 0015-3222Article

Thermochemistry in the system Cu-In-S at 298 KMIGGE, H.Journal of materials research. 1991, Vol 6, Num 11, pp 2381-2386, issn 0884-2914Article

On the growth of CuInS₂ thin films by three-source evaporationWU, Y. L; LIN, H. Y; SUN, C. Y et al.Thin solid films. 1989, Vol 168, Num 1, pp 113-122, issn 0040-6090Article

Precise and accurate determination of the stoichiometry of CuInS₂ semicoductor material by electrochemical methodsSHEU, S. C; LEE, M. L; HWANG, H. L et al.Fresenius' Zeitschrift für analytische Chemie. 1989, Vol 334, Num 2, pp 143-147, issn 0016-1152Article

Anomalous temperature-dependent band gaps in CuInS₂ studied by surface-barrier electroreflectanceHSU, T. M; LIN, J. H.Physical review. B, Condensed matter. 1988, Vol 37, Num 8, pp 4106-4110, issn 0163-1829Article